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ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 515 A
FEATURES
* * * * * * * * * * *
515 A
TO-200AC (B-PUK)
Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt International standard case TO-200AC (B-PUK) High surge current capability Low thermal impedance High speed performance Lead (Pb)-free Designed and qualified for industrial level
RoHS
COMPLIANT
PRODUCT SUMMARY
IT(AV)
TYPICAL APPLICATIONS
* * * * Inverters Choppers Induction heating All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) TEST CONDITIONS VALUES 515 Ths 55 995 Ths 50 Hz 60 Hz 50 Hz 60 Hz 25 7950 8320 316 289 400 to 1200 Range 10 to 30 - 40 to 125 UNITS A C A C A
IT(RMS) ITSM I2 t VDRM/VRRM tq TJ
kA2s V s C
Note * tq = 10 to 20 s for 400 to 800 V devices tq = 15 to 30 s for 1000 to 1200 V devices
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 ST303C..L 08 10 12 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 1100 1300 50 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA
Document Number: 94374 Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 515 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage VR Voltage before turn-on VD Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit
1130 1010 680 230 50 VDRM 50 40 10/0.47
950 820 530 140
1800 1850 1560 690 50 VDRM -
1540 1570 1300 510
5660 2830 1490 540 50 VDRM -
4990 2420 1220 390 V A/s 55 10/0.47 C /F A
55
40 10/0.47
55
40
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 515 (190) 55 (85) 995 7950 8320 6690 Sinusoidal half wave, initial TJ = TJ maximum 7000 316 289 224 204 3160 2.16 1.44 1.48 0.57 0.56 600 1000 m V kA2s kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied ITM = 1255 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A
Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
mA
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Document Number: 94374 Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 515 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time minimum Maximum turn-off time (1) maximum tq SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = rated VDRM ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code VALUES 1000 0.83 10 30 s UNITS A/s
Note (1) t = 10 to 20 s for 400 to 800 V devices; t = 15 to 30 s for 1000 to 1200 V devices q q
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 50 UNITS V/s mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate currrent required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = TJ maximum, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.11 0.05 0.011 0.005 9800 (1000) 250 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C
Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style
RthC-hs
TO-200AC (B-PUK)
Document Number: 94374 Revision: 25-Jul-08
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ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 515 A
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.012 0.014 0.018 0.026 0.045 DOUBLE SIDE 0.010 0.015 0.018 0.027 0.046 RECTANGULAR CONDUCTION SINGLE SIDE 0.008 0.014 0.019 0.027 0.046 DOUBLE SIDE 0.008 0.014 0.019 0.028 0.046 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Maximum Allowable Heats Temp erature (C) ink
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 0 50 100 150 200 250 300 350 Average On-state Current (A) 30 60 90 120 180
Conduction Angle
130 120 110 100 90 80 70 60 50 40 30 0 100 200 30
S 303C..L S T eries (S ingle S ide Cooled) RthJ-hs(DC) = 0.11 K/ W
S 303C..L S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.05 K/ W
Conduc tion Angle
60
90 120 180 600 700
300
400
500
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Heatsink T emperature (C)
130 120 110 100 90 80 70 60 50 40 30 20 0 100 30
Maximum Allowable Heatsink T emperature (C)
S 303C..L S T eries (S ingle S Cooled) ide RthJ-hs(DC) = 0.11 K/ W
130 120 110 100 90 80 70 60 50 40 30 20 0 200 30
S 303C..L S T eries (Double S Cooled) ide RthJ-hs(DC) = 0.05 K/ W
Conduction Period
Conduc tion Period
60 90 120 180 DC 400 600 800 1000 1200
60 90 120 180 200 300 400 DC 500 600
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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Document Number: 94374 Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 515 A
Maximum Average On-state Power Loss (W)
Peak Half S Wave On-s ine tate Current (A)
2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 Average On-state Current (A)
Conduction Angle
180 120 90 60 30 RMS Limit
8000 7500
Maximum Non Repetitive S urge Current Vers Pulse T us rain Duration. Control Of Conduction May Not Be Maintained. 7000 Initial T = 125C J No Voltage Reapplied 6500 Rated VRRM R eapplied 6000 5500 5000 4500 4000 3500 S 303C..L S T eries 0.1 Pulse T rain Duration (s) 1
S 303C..L S T eries T = 125C J
3000 0.01
Fig. 5 - On-State Power Loss Characteristics
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
10000 Instantaneous On-state Current (A)
Maximum Average On-state Power Loss (W)
2600 2400 2200 2000 1800 1600 1400 DC 180 120 90 60 30
1200 RMSLimit 1000 800 600 400 200 0 0 200 400 600
1000 T = 25C J T = 125C J
Conduction Period
S 303C..L S T eries T = 125C J 800 1000 1200
S 303C..L S T eries 100 0 1 2 3 4 5 6 7 8
Average On-state Current (A)
Instantaneous On-state Voltage (V)
Fig. 6 - On-state Power Loss Characteristics
T rans ient Thermal Impedance Z thJ-hs (K/ W)
7000 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 9 - On-state Voltage Drop Characteristics
1
Peak Half S Wave On-state Current (A) ine
At Any Rated Load Condition And With Rated VRRM Applied Following S urge. Initial T = 125C J at 60 Hz 0.0083 s at 50 Hz 0.0100 s
S teady S tate Value RthJ-hs = 0.11 K/ W (S ingle S ide Cooled) RthJ-hs = 0.05 K/ W (Double S Cooled) ide (DC Operation)
0.1
0.01 S 303C..L S T eries 0.001 0.001
S 303C..L S T eries
0.01
0.1
1
10
S quare Wave Pulse Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Document Number: 94374 Revision: 25-Jul-08
For technical questions, contact: ind-modules@vishay.com
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ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 515 A
180 I = 1000 A 170 T M 160 500 A 150 300 A 140 200 A 130 100 A 120 110 100 90 80 70 S 303C..L S T eries 60 T = 125 C J 50 40 30 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of Forward Current - di/ dt (A/ s) Maximum Reverse R overy Current - Irr (A) ec
50 Hz
1000 500
Maximum Reverse R overy Charge - Qrr (C) ec
320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 S 303C..L S T eries T = 125 C J 60 70 80 90 100
IT = 1000 A M 500 A 300 A 200 A 100 A
Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
1E 4
Peak On-state Current (A)
1000 1500
200 500 400
100
100 50 Hz 400 200
1E 3
2000 2500 3000 tp
S nub ber circ uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303C..L S T eries S inusoida l pulse T = 40C C
1500 2000 2500 3000 tp
S nubber c ircuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303C..L S T eries S inusoidal pulse TC = 55C
1E 2 1E1
1E 2
1E3
1E
1E1 1E1
1E2
1E3
1E 4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E4
S nub b er c ircuit R = 10 ohms s C = 0.47 F s V = 80% V DRM
D
Peak On-state Current (A)
1E3
1500 2000 2500
500 1000
50 Hz 400 200 100
S nubb er circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM 1000 1500 2000 2500 500 400 200 100 50 Hz
1E2
3000 S 303C..L S T eries T ezoid al p ulse rap T = 40C C d i/ d t = 50A/ s
3000 tp S 303C..L S T eries T pezoida l pulse ra T = 55C C d i/d t = 50A/s
tp
1E1 1E1
1E2
1E 3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Frequency Characteristics
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Document Number: 94374 Revision: 25-Jul-08
ST303CLPbF Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 515 A
1E4
S nub b er circ uit Rs = 10 ohms Cs = 0.47 F VD = 80% V DRM
Peak On-s tate Current (A)
S nub ber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DRM
1E3
1500 2000 2500
1000
500
400
200
100
50 Hz
500 1000 1500 2000 2500 400
200 100
50 Hz
1E2
3000 S 303C..L S T eries T pezoid al p ulse ra T = 40C C di/ d t = 100A/ s
3000 S 303C..L S T eries T pezoida l p ulse ra T = 55C C di/ dt = 100A/ s
tp
tp
1E1 1E1
1E 2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 15 - Frequency Characteristics
1E5
S 303C..L S T eries Rec tangular pulse
Peak On-state Current (A)
tp
d i/d t = 50A/ s 20 joules p er p ulse 10 5 3 2 1 0.5 0.4
1E4
2 3 5 10
20 joules p er p ulse
1E3
0.5 0.4
1
1E2
S 303C..L S T eries S inusoid al p ulse
tp
1E1 1E 1
1E2
1E 3
1E4
1E1 1E1
1E 2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
100 In tantaneousG s ate V oltage (V )
10
R ectangular gate puls e a) R ecomm ended load line for rated di/dt : 2 V, 1 0 0ohm ; tr<= s 1s b) R ecomm ended load line for < 0 rated di/dt : 1 , 1 ohm =3 % 0V 0 s tr<= 1s (b)
j= 0 T -4 C T2 j= 5 C j= 2 T 1 5 C
(1 P ) GM = 10 , W (2 P ) GM = 20 , W (3 P ) GM = 4 W 0, (4 P ) GM = 6 W 0, (a)
tp = 20 s m tp = 10 s m tp = 5 s m tp = 3 m .3 s
1 VGD IGD 0.1 0.001
) ) (1) (2 (3 (4)
D evice: S3 3C..LS T0 eries F requency L ited by P im G(AV ) 0.01 0.1 1 10 100
Ins tantaneousG ate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94374 Revision: 25-Jul-08
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ST303CLPbF Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 515 A
ORDERING INFORMATION TABLE
Device code
ST
1
1 2 3 4 5 6 7 8 9
30
2 -
3
3
C
4
12
5
L
6
H
7
K
8
1
9
10
P
11
Thyristor Essential part number 3 = Fast turn-off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AC (B-PUK) Reapplied dV/dt code (for tq test condition) tq code dV/dt - tq combinations available dV/dt (V/s) 10 tq (s) 12 up to 800 V 15 20 20 CN CM CL CK 50 DN DM DL DK 100 EN EM EL EK 200 FN* FM FL* FK* 400 HN HM HL HK
0 = Eyelet terminals CL 15 tq (s) CP DP 18 (gate and auxiliary cathode unsoldered leads) CK DK EK FK* HK 20 only for 1 = Fast-on terminals CJ DJ EJ FJ* HJ 1000/1200 V 25 - DH EH FH HH 30 (gate and auxiliary cathode unsoldered leads) * Standard part number. 2 = Eyelet terminals All other types available only on request. (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
10
-
Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection)
11
-
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95076
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Document Number: 94374 Revision: 25-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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